RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

Author

Ding, Shi-Jin ; Hu, Hang ; Zhu, Chunxiang ; Kim, Sun Jung ; Xiongfei Yu ; Li, Ming-Fu ; Cho, Byung Jin ; Chan, Daniel S H ; Yu, M.B. ; Rustagi, Subhash C. ; Chin, Albert ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

51

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

886

Lastpage

894

Abstract

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF//spl mu/m/sup 2/) up to 20 GHz, low leakage current of 4.9/spl times/10/sup -8/ A/cm/sup 2/ at 2 V and 125/spl deg/C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (/spl alpha/) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

Keywords

MIM devices; alumina; atomic layer deposition; capacitors; hafnium compounds; laminates; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; reliability; silicon; 125 C; 2 V; HfO/sub 2/-Al/sub 2/O/sub 3/; MIM capacitors; RF IC applications; RF capacitors; atomic layer-deposit; constant voltage stress; high capacitance density; leakage current; metal-insulator-metal capacitors; mixed-signal applications; quadratic voltage coefficient; radio frequency; voltage linearity; Aluminum compounds; Capacitors; Hafnium compounds; MIM devices; Mixed analog-digital integrated circuits; Nonhomogeneous media; Reliability; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.827367

Filename

1300821