Title :
RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications
Author :
Ding, Shi-Jin ; Hu, Hang ; Zhu, Chunxiang ; Kim, Sun Jung ; Xiongfei Yu ; Li, Ming-Fu ; Cho, Byung Jin ; Chan, Daniel S H ; Yu, M.B. ; Rustagi, Subhash C. ; Chin, Albert ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
6/1/2004 12:00:00 AM
Abstract :
High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF//spl mu/m/sup 2/) up to 20 GHz, low leakage current of 4.9/spl times/10/sup -8/ A/cm/sup 2/ at 2 V and 125/spl deg/C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (/spl alpha/) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.
Keywords :
MIM devices; alumina; atomic layer deposition; capacitors; hafnium compounds; laminates; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; reliability; silicon; 125 C; 2 V; HfO/sub 2/-Al/sub 2/O/sub 3/; MIM capacitors; RF IC applications; RF capacitors; atomic layer-deposit; constant voltage stress; high capacitance density; leakage current; metal-insulator-metal capacitors; mixed-signal applications; quadratic voltage coefficient; radio frequency; voltage linearity; Aluminum compounds; Capacitors; Hafnium compounds; MIM devices; Mixed analog-digital integrated circuits; Nonhomogeneous media; Reliability; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.827367
