• DocumentCode
    992895
  • Title

    Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

  • Author

    Djie, H.S. ; Wang, Y. ; Ooi, B.S. ; Wang, D.N. ; Hwang, J. C M ; Fang, X.-M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Dang, G.T. ; Chang, W.H.

  • Author_Institution
    Lehigh Univ., Bethlehem, PA
  • Volume
    43
  • Issue
    1
  • fYear
    2007
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    The first demonstration is reported of a bandgap tuned laser using InAs/InAlGaAs quantum-dash-in-well structures on an InP substrate, which utilises impurity-free induced intermixing. The intermixed laser exhibits comparable light-current characteristics after the bandgap is postgrowth-tuned by 100 nm
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser tuning; quantum dot lasers; quantum well lasers; 100 nm; InAs-InAlGaAs; intermixed laser; quantum dash in well structures; wavelength tuning;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    4068479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=992895