Title :
High-speed and low-power GaAs DCFL divider
Author :
Nagano, Kotaro ; Yagita, H. ; Tamura, A. ; Uenoyama, T. ; Tsujii, H. ; Nishii, Kento ; Sakashita, T. ; Onuma, T.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan
Abstract :
High-speed and low-power divide-by-252 or -256 circuit have been fabricated by using high-transconductance GaAs enhancement-mode MESFETs. This variable-modulus divider is able to operate up to a clock frequency of 3.7 GHz. The total power dissipation at the maximum frequency is 180 mW, and it is as low as 42 mW and 30 mW at 3 GHz and 2.5 GHz, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; 2.5 GHz; 3 GHz; 3.7 GHz clock frequency; DCFL divider; GaAs; III-V semiconductors; direct coupled FET logic; divide-by-252 circuit; divide-by-256 circuit; enhancement-mode MESFET; frequency dividers; high-speed low-power design; logic IC; variable-modulus divider;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840381
