Research of Single-Event Burnout in Power UMOSFETs

Author

Ying Wang ; Yue Zhang ; Chenghao Yu

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

60

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

887

Lastpage

892

Abstract

This brief presents 2-D numerical simulation results of single-event burnout (SEB) in power UMOSFETs (trench-gate MOSFET) and investigates hardening solutions to SEB such as carrier lifetime reduction, emitter doping decrease, and p⁺ plug modification. We find that the linear energy transfer (LET) does not have an important influence on the occurrence of SEB. In addition, we present the effect of a varied ion strike position, and the result is that the position in the middle of the neck is easier to SEB than the other positions. In addition, the single-event gate rupture (SEGR) threshold voltages in different LETs are given in order to compare with SEB.

Keywords

numerical analysis; power MOSFET; radiation hardening (electronics); 2D numerical simulation; LET; SEB; SEGR threshold voltages; carrier lifetime reduction; emitter doping; ion strike position; linear energy transfer; plug modification; power UMOSFET; single-event burnout; single-event gate rupture; trench-gate MOSFET; Doping; Logic gates; Plugs; Power MOSFET; Simulation; Threshold voltage; Linear energy transfer (LET); Power UMOSFET; SEB hardening solution; single-event burnout (SEB);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2234126

Filename

6410408