Spectroscopy charge amplifier for detectors with integrated front-end FET

Author

Bertuccio, G. ; Fasoli, L. ; Fiorini, C. ; Sampietro, M.

Author_Institution

Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

1399

Lastpage

1405

Abstract

A charge amplifier, especially designed for FET integrated on silicon radiation detectors, is presented. The circuit is based on the forward biased FET amplifier configuration, which does not require the feedback resistor nor additional devices for resetting. The severe constraints on the preamplifier design, imposed by the low transconductance of small size integrated FET´s, are analyzed as far as loop-gain, bandwidth, and noise are concerned. A circuit topology which satisfies all the requirements even at relatively fast shaping time (1 μs) is proposed and experimentally tested

Keywords

amplifiers; detector circuits; field effect transistors; nuclear electronics; silicon radiation detectors; Si radiation detectors; bandwidth; circuit topology; feedback resistor; forward biased FET amplifier configuration; integrated front-end FET; loop-gain; noise; preamplifier design; shaping time; small size integrated FET; spectroscopy charge amplifier; transconductance; Bandwidth; Circuit testing; FETs; Feedback circuits; Noise shaping; Preamplifiers; Resistors; Silicon radiation detectors; Spectroscopy; Transconductance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467728

Filename

467728