Title :
Improved Nb-Si-Nb SNAP devices
Author :
Kroger, H. ; Smith, L.N. ; Jillie, D.W. ; Thaxter, J.B.
Author_Institution :
Sperry Research Center, Sudbury, MA, USA
fDate :
5/1/1983 12:00:00 AM
Abstract :
We have compared the tunneling characteristics of Nb-Si-Nb junctions whose amorphous silicon barriers have been sputtered in pure Ar with those sputtered Ar-H2plasmas as well as in various combinations. We observe lower subgap currents with composite barriers which comprise a central region which is hydrogenated but which is sandwiched between two thin unhydrogenated layers. The improved tunneling characteristics may be associated with the lower density of localized states in the hydrogenated silicon.
Keywords :
Amorphous semiconductor materials/devices; Josephson devices; Silicon materials/devices; Amorphous silicon; Argon; Electrodes; Niobium; Oxidation; Plasma density; Plasma devices; Plasma properties; Reflectivity; Tunneling;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1983.1062286
