Title :
Characterization and modeling of InGaP HBT low-frequency oscillations
Author :
Burton, Richard S. ; Dai, Peter
Author_Institution :
Skyworks Solutions Inc., Newbury Park, CA, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
Audio and near-audio frequency oscillations of InGaP heterojunction bipolar transistors (HBT) devices at room temperature have been observed in an environment typical of high-frequency S-parameter device characterization systems. The oscillations are attributed to sufficient phase shift of the low-frequency thermal impedance in combination with a reactive input impedance resulting in system instability. The oscillations are demonstrated through transient circuit simulations using vertical bipolar intercompany models and predicted using a simple small-signal model.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; transient analysis; BJT; HBT devices; InGaP; InGaP HBT; VBIC; audio frequency oscillations; bipolar junction transistor; electrothermal effects; heterojunction bipolar transistors; high-frequency S-parameter device characterization systems; low-frequency oscillations; low-frequency thermal impedance; near-audio frequency oscillations; phase shift; power amplifiers; power bipolar transistors; reactive input impedance; room temperature; safe operating area; semiconductor device thermal factors; small-signal model; system instability; transient circuit simulations; vertical bipolar intercompany models; Circuit simulation; Electrothermal effects; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power system modeling; Predictive models; Radio frequency; Semiconductor optical amplifiers; Temperature; BJT; Bipolar junction transistor; HBT; HBTs; InGaP; VBIC; electrothermal effects; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; safe operating area; semiconductor device thermal factors; vertical bipolar intercompany;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829521
