Characterization and modeling of InGaP HBT low-frequency oscillations

Author

Burton, Richard S. ; Dai, Peter

Author_Institution

Skyworks Solutions Inc., Newbury Park, CA, USA

Volume

51

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1033

Lastpage

1036

Abstract

Audio and near-audio frequency oscillations of InGaP heterojunction bipolar transistors (HBT) devices at room temperature have been observed in an environment typical of high-frequency S-parameter device characterization systems. The oscillations are attributed to sufficient phase shift of the low-frequency thermal impedance in combination with a reactive input impedance resulting in system instability. The oscillations are demonstrated through transient circuit simulations using vertical bipolar intercompany models and predicted using a simple small-signal model.

Keywords

III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; transient analysis; BJT; HBT devices; InGaP; InGaP HBT; VBIC; audio frequency oscillations; bipolar junction transistor; electrothermal effects; heterojunction bipolar transistors; high-frequency S-parameter device characterization systems; low-frequency oscillations; low-frequency thermal impedance; near-audio frequency oscillations; phase shift; power amplifiers; power bipolar transistors; reactive input impedance; room temperature; safe operating area; semiconductor device thermal factors; small-signal model; system instability; transient circuit simulations; vertical bipolar intercompany models; Circuit simulation; Electrothermal effects; Heterojunction bipolar transistors; Impedance; Power amplifiers; Power system modeling; Predictive models; Radio frequency; Semiconductor optical amplifiers; Temperature; BJT; Bipolar junction transistor; HBT; HBTs; InGaP; VBIC; electrothermal effects; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; safe operating area; semiconductor device thermal factors; vertical bipolar intercompany;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.829521

Filename

1300841