Surface recombination mechanism in graded-base InGaAs-InP HBTs

Author

Jin, Z. ; Neumann, S. ; Prost, W. ; Tegude, F.J.

Author_Institution

Solid State Electron. Dept., Univ. Duisburg-Essen, Duisburg, Germany

Volume

51

Issue

6

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1044

Lastpage

1045

Abstract

The surface recombination at extrinsic base region in graded-base InGaAs-InP heterostructure bipolar transistors (HBTs) is studied. The (NH₄)₂S treatment eliminates the surface recombination, seen from the size-independent current gain. The surface recombination currents of the selfand nonself-aligned HBTs have different behavior. The mechanism of it is discussed.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; (NH₄)₂S treatment; InGaAs-InP; extrinsic base region; graded-base InGaAs-InP HBT; heterostructure bipolar transistors; nonself-aligned HBT; self-aligned HBT; size-independent current gain; surface recombination mechanism; Bipolar transistors; Chemicals; Current density; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Radiative recombination; Surface treatment; Graded base; HBT; InP; heterostructure bipolar transistor; surface recombination;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.827380

Filename

1300844