DocumentCode
993188
Title
Microprocessing of GaAs cylindrical columns for integrated optical device fabrication by Cl2-Ar reactive ion etching
Author
Yamada, Hiroyoshi ; Ito, H. ; Inaba, Hiromi
Author_Institution
Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
Volume
20
Issue
14
fYear
1984
Firstpage
591
Lastpage
592
Abstract
We report a reactive ion etching (RIE) technique employing a Cl2-Ar gas mixture for GaAs integrated optical device fabrication. This RIE enables one to process GaAs and AlGaAs wafers independently of crystal orientation. Etching characteristics and a demonstration of the vertical etching of GaAs wafers in the shape of a cylindrical column are described.
Keywords
III-V semiconductors; gallium arsenide; integrated circuit technology; integrated optics; optical workshop techniques; optoelectronic devices; sputter etching; AlGaAs wafers; Cl2-Ar reactive ion etching; GaAs cylindrical columns; IC technology; III-V semiconductor; RIE; integrated optical device fabrication; optical workshop techniques; optoelectronic devices; vertical etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840408
Filename
4248885
Link To Document