• DocumentCode
    993232
  • Title

    Negative X-ray resist produced by proton bombardment

  • Author

    Gecim, H.S. ; Howe, R. ; Mcgowan, J.W. ; Reid, I.

  • Author_Institution
    University of Western Ontario, Centre for Interdisciplinary Studies in Chemical Physics Department of Physics, London, Canada
  • Volume
    20
  • Issue
    14
  • fYear
    1984
  • Firstpage
    598
  • Lastpage
    599
  • Abstract
    Polymethylmetacrylate (PMMA) films of 580 nm have been irradiated by X-rays through a copper mask. Subsequent proton bombardment of the PMMA films (masked and unmasked regions) changes them, at doses ¿2×1013 ions/cm2, from a positive to a negative resist.
  • Keywords
    ion beam effects; large scale integration; masks; photoresists; polymer films; proton effects; Cu mask; PMMA films; VLSI; X-ray resist; ion bombardment; negative resist; photolithography; polymethylmethacrylate; proton bombardment; sensitising; submicron linewidths; wavelength 5 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840412
  • Filename
    4248890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993232