Title :
Picosecond absorption saturation in GaInAsP
Author :
Miller, Alice ; Manning, R.J. ; Fox, A.M. ; Marsh, John H.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Abstract :
Optical excite/probe measurements in Ga0.35In0.65As0.78¿P0.22 using high-power 5 ps pulses at 1.054 ¿m show a recovery of the bleached transmission in 12 Ps consistent with fast Auger carrier recombination. Evidence of induced intervalence band absorption is apparent.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical saturable absorption; Ga0.35In0.65As0.78P0.22; GaInAsP; III-V semiconductors; bleached transmission; fast Auger carrier recombination; high-power 5 ps pulses; induced intervalence band absorption; optical excite/probe measurements; picosecond optical absorption saturation; wavelength 1.054 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840415
