Title :
Monolithically integrated Gunn oscillator at 35 GHz
Author :
Wang, N. ; Schwarz, S.E. ; Hierl, T.
Author_Institution :
University of California, Electrical Engineering Department & Electronics Research Laboratory, Berkeley, USA
Abstract :
A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.
Keywords :
Gunn oscillators; III-V semiconductors; gallium arsenide; integrated circuit technology; microwave integrated circuits; monolithic integrated circuits; EHF; GaAs substrate; Ka-band; MMIC; efficiency; frequency 35 GHz; integrated millimetre-wave receivers; local oscillator; mm-waves; output power; planar monolithically integrated Gunn oscillator; quasioptical coupling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840416
