DocumentCode
993358
Title
Scintillation characteristics of GSO single crystal grown under O 2-containing atmosphere
Author
Kurata, Y. ; Kurashige, K. ; Ishibashi, H. ; Susa, K.
Author_Institution
Tsukuba Res. Lab., Hitachi Chem. Co. Ltd., Ibaraki, Japan
Volume
42
Issue
4
fYear
1995
fDate
8/1/1995 12:00:00 AM
Firstpage
1038
Lastpage
1040
Abstract
A Ce doped Gd2SiO5 (GSO) single crystal is an excellent scintillator featuring a large light output, a short decay constant and a high absorption coefficient. We have investigated dependence of the scintillation characteristics on the growth atmosphere. GSO crystal is usually grown in pure N2, which due to thermal etching during the growth always roughens the boule surface, inducing some micro-cracks on the surface which often triggers the large crack in the boule. To eliminate this, we first introduced 1 vol% O2-containing N2 gas for the growth atmosphere. The resultant boule turned to be very smooth in surface, but pale yellow in color and degraded in the scintillation characteristics. To retain these properties, we then introduced an annealing process and found the annealing under pure N2 atmosphere quite effective on the recovery both in color and scintillation properties
Keywords
annealing; cerium; crystal growth from melt; gadolinium compounds; scintillation; solid scintillation detectors; Czochralski method; GSO:Ce single crystal growth; Gd2SiO5:Ce; O2-containing N2 gas; O2-containing atmosphere; annealing process; boule surface; color recovery; growth atmosphere; pale yellow; pure N2 atmosphere; scintillation characteristics; surface microcracks; thermal etching; Absorption; Anisotropic magnetoresistance; Annealing; Atmosphere; Crystalline materials; Etching; Positron emission tomography; Rough surfaces; Surface cracks; Surface roughness;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.467752
Filename
467752
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