Title :
Amplifier-modulator integrated with a cleaved-coupled-cavity injection laser
Author :
Lee, T.P. ; Burrus, C.A. ; Eisenstein, Gadi ; Sessa, W.B. ; Besomi, P.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1.3 ¿m InGaAsP/InP laser chip. The maximum available gain was 20 at an input power of ¿19.2 dBm, and it reduced to 10 at an input power of ¿10.5 dBm. High on/off extinction ratios and side-mode suppression >100:1 were achieved at about 1 Gbit/s (NRZ) modulation rate.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP/InP laser chip; amplifier-modulator; cleaved-coupled-cavity injection laser; modulation rate; on/off extinction ratios; semiconductor junction laser; side-mode suppression;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840430
