• DocumentCode
    993570
  • Title

    High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE

  • Author

    Sugimoto, Yoshiki ; Torikai, T. ; Makita, Kikuo ; Ishihara, H. ; Minemura, Kazuki ; Taguchi, Katsuhisa ; Iwakami, Tetsuro

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    20
  • Issue
    16
  • fYear
    1984
  • Firstpage
    653
  • Lastpage
    654
  • Abstract
    Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 ¿m and 1.8 Gbit/s. The minimum average received level required for 10¿9 BER was ¿31.3 dBm, which was 1.2 dB better than the value for the Ge-APD.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; vapour phase epitaxial growth; 1.3 micron wavelength; Be+ implanted guard ring; III-V semiconductors; InP/InGaAsP/InGaAs avalanche photodiodes; VPE-growth technique; minimum average received level; sensitivity measurement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840447
  • Filename
    4248936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=993570