Title :
High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE
Author :
Sugimoto, Yoshiki ; Torikai, T. ; Makita, Kikuo ; Ishihara, H. ; Minemura, Kazuki ; Taguchi, Katsuhisa ; Iwakami, Tetsuro
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 ¿m and 1.8 Gbit/s. The minimum average received level required for 10¿9 BER was ¿31.3 dBm, which was 1.2 dB better than the value for the Ge-APD.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; vapour phase epitaxial growth; 1.3 micron wavelength; Be+ implanted guard ring; III-V semiconductors; InP/InGaAsP/InGaAs avalanche photodiodes; VPE-growth technique; minimum average received level; sensitivity measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840447
