The Effects of the Injection-Channel Velocity on the Gate Leakage Current of Nanoscale MOSFETs

A model is established to describe how the injection-channel electron velocity of nanometer MOSFETs affects the gate leakage current in the regime of diffusive to ballistic transition. The results show that the coupling between the transverse and the longitudinal components of electron motion largely affects the gate leakage current when the electron velocity is higher than the thermal injection velocity (1times10⁷ cm/s). It suggests that due to the ballistic transport, the coupling effect should be considered for the gate leakage current of nanoscale MOSFETs, if the channel electrons reach a higher velocity