Title :
Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors
Author :
Moon, Chang-Rok ; Jung, Jongwan ; Kwon, Doo-Won ; Yoo, Jongryeol ; Lee, Duck-Hyung ; Kim, Kinam
Author_Institution :
Memory Div., Samsung Electron. Co., Gyeonggi-Do
Abstract :
Plasma doping (PLAD) was applied to reduce the dark current of CMOS image sensor (CIS), for the first time. PLAD was employed around shallow trench isolation (STI) to screen the defective sidewalls and edges of STI from the depletion region of photodiode. This technique can provide not only shallow but also conformal doping around the STI, making it a suitable doping technique for pinning purposes for CISs with sub-2-mum pixel pitch. The measured results show that temporal noise and dark signal deviation as well as dark level decrease
Keywords :
CMOS image sensors; isolation technology; photodiodes; plasma applications; semiconductor doping; CMOS image sensors; PLAD; STI; dark current; dark signal deviation; photodiode; plasma doping; shallow trench isolation; temporal noise; CMOS image sensors; Computational Intelligence Society; Dark current; Degradation; Doping; Image sensors; Moon; Photodiodes; Plasma applications; Plasma measurements; CMOS image sensors (CISs); dark current; photodiode; plasma doping (PLAD); shallow trench isolation (STI); temporal noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.889241
