• DocumentCode
    993646
  • Title

    Physical Modeling of Temperature Coefficient of Resistance for Single- and Multi-Wall Carbon Nanotube Interconnects

  • Author

    Naeemi, Azad ; Meindl, James D.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA
  • Volume
    28
  • Issue
    2
  • fYear
    2007
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    Equivalent circuit models are presented for the resistance of single- and multi-wall carbon nanotubes (MWCNs) that capture various electron-phonon scattering mechanisms as well as changes in the number of conduction channels as a function of temperature. For single- and few-wall nanotubes, the temperature coefficient of resistance (TCR) is always positive and increases with length. It reaches 1/(T-200 K) for lengths much larger than the electron mean free path, where T is the temperature in kelvin. For MWCNs with large diameters (>20 nm), TCR varies from -1/T to +0.66/(T-200 K) as the length varies from zero to very large values
  • Keywords
    carbon nanotubes; electric resistance; electrical conductivity; equivalent circuits; integrated circuit interconnections; semiconductor quantum wires; electron phonon scattering; equivalent circuit models; molecular electronics; multi wall carbon nanotube interconnects; physical modeling; quantum wires; single wall carbon nanotube interconnects; temperature coefficient of resistance; Acoustic scattering; Carbon nanotubes; Copper; Electrons; Integrated circuit interconnections; Kelvin; Particle scattering; Temperature; Thermal conductivity; Wires; Conductivity; interconnections; modeling; molecular electronics; quantum wires; temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.889240
  • Filename
    4068963