Two-dimensional numerical simulation of trapping phenomena in the substrate of GaAs MESFET´s

Author

Barton, Trevor M. ; Snowden, Christopher M.

Author_Institution

Dept. of Electr. & Electron. Eng., Leeds Univ., UK

Volume

37

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1409

Lastpage

1415

Abstract

A two-dimensional physical model which includes the effects of deep levels in semi-insulating GaAs is described and applied to an investigation of the effects of trapping phenomena in the substrate of a GaAs MESFET. The model is used to investigate some of the anomalous features of the operation of these devices which have in the past been attributed to traps near the channel-substrate interface. The mechanisms by which deep levels determine the detail of the transient behavior under pulsed operation is determined. In addition, the frequency dependence of the output conductance is explained in terms of a reduction in the magnitude of the substrate current at low frequencies as the trap filling varies in response to the impressed terminal voltages. The calculations reported are supported by experimental measurement of a similar device

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep levels; digital simulation; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; anomalous features; effects of deep levels; experimental measurement; frequency dependence; low frequencies; numerical simulation; output conductance; pulsed operation; semi-insulating GaAs; semiconductors; substrate current; transient behavior; trap filling; trapping phenomena; two-dimensional physical model; Boundary conditions; Electrons; Frequency dependence; Gallium arsenide; MESFETs; Numerical simulation; Poisson equations; Solid modeling; Steady-state; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.106234

Filename

106234