Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches

Author

Rengel, Raul ; Pascual, Elena ; Martin, Maria J.

Author_Institution

Dept. de Fisica Aplicada, Salamanca Univ.

Volume

28

Issue

2

fYear

2007

Firstpage

171

Lastpage

173

Abstract

An exact solution of the quantum transmission coefficient has been obtained by using an Airy-transfer-matrix formalism to solve Schroumldinger equation. The procedure is applied to the calculation of the transmission coefficient in reverse-biased low Schottky diodes. The barrier profiles are given by Monte Carlo device simulations. As compared to the exact calculation, results indicate that injected current is much exacerbated when considering Wentzel-Kramers-Brillouin (WKB) approach or when neglecting quantum mechanical reflections for energies over the potential barrier. However, WKB could reasonably predict the total current if properly modifying the model parameters. Influence of barrier lowering is also discussed

Keywords

Monte Carlo methods; Schottky barriers; Schottky diodes; Schrodinger equation; semiconductor device models; Airy transfer matrix; Monte Carlo device simulations; Schottky barriers; Schottky diodes; Schrodinger equation; Wentzel-Kramers-Brillouin approach; injected current coefficient; potential barrier; quantum mechanical reflections; quantum transmission coefficient; semiconductor device modeling; MOSFETs; Monte Carlo methods; Quantum mechanics; Reflection; Schottky barriers; Schottky diodes; Schrodinger equation; Silicon; Turning; Wave functions; Airy functions; Schottky barriers (SBs); Wentzel–Kramers–Brillouin (WKB) approach; metallic source/drain; quantum transmission coefficient; semiconductor device modeling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889511

Filename

4068968