SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

Author

Shigekawa, Naoteru ; Nishimura, Kazumi ; Suemitsu, Tetsuya ; Yokoyama, Haruki ; Hohkawa, Kohji

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

Volume

28

Issue

2

fYear

2007

Firstpage

90

Lastpage

92

Abstract

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts

Keywords

Schottky barriers; aluminium compounds; gallium compounds; high electron mobility transistors; interdigital transducers; ohmic contacts; surface acoustic wave filters; AlGaN-GaN; SAW filters; high-electron mobility transistors; interdigital Schottky contact; interdigital transducer; ohmic contacts; surface acoustic wave filter; Acoustic waves; Aluminum gallium nitride; Gallium nitride; HEMTs; Ohmic contacts; Radio frequency; SAW filters; Schottky barriers; Surface acoustic waves; Threshold voltage; AlGaN/GaN; heterostructure; interdigital transducer (IDTs); surface acoustic wave (SAW) filter;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.889043

Filename

4068969