Epitaxial n-channel JFETs integrated on high resistivity silicon for X-ray detectors

Author

Lund, J.C. ; Olschner, F. ; Bennett, P. ; Rehn, L.

Author_Institution

Radiatian Monitoring Devices Inc., Watertown, MA, USA

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

820

Lastpage

823

Abstract

Junction field-effect transistors (JFETs) were fabricated directly onto a high resistivity silicon wafer and tested as readout devices for radiation detectors. The JFETs were fabricated using an n-channel epitaxial process. We report on the design and electrical characteristics of these devices as well as the noise performance and energy resolution obtained with these devices when operated as X-ray spectrometers

Keywords

JFET integrated circuits; X-ray detection; X-ray spectrometers; detector circuits; field effect analogue integrated circuits; nuclear electronics; semiconductor device noise; semiconductor epitaxial layers; silicon radiation detectors; Si; X-ray detectors; X-ray spectrometers; design characteristics; electrical characteristics; energy resolution; epitaxial n-channel JFETs integration; high resistivity Si; junction field-effect transistors; noise performance; radiation detectors; readout devices; Capacitance; Conductivity; Implants; JFETs; MOSFETs; Preamplifiers; Silicon; Substrates; Temperature; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467786

Filename

467786