Compact modelling of noise for RF CMOS circuit design

Author

Scholten, A.J. ; Tiemeijer, L.F. ; van Langevelde, R. ; Havens, R.J. ; Van Duijnhoven, A. T A Zegers ; de Kort, R. ; Klaassen, D.B.M.

Author_Institution

Philips Res. Labs., Eindhoven, Netherlands

Volume

151

Issue

2

fYear

2004

fDate

4/12/2004 12:00:00 AM

Firstpage

167

Lastpage

174

Abstract

The thermal noise of short-channel NMOS transistors in a commercially available 0.13-μm CMOS technology is studied. The experimental results are modelled with a non-quasi-static RF model, based on the principle of channel segmentation. The model is capable of predicting both drain and gate current noise accurately, without fitting any parameters to the measured noise data. An essential ingredient of the model is the gate resistance, which is shown to dominate the gate current noise. In the optimised device layouts, this gate resistance is mainly determined by the silicide-to-polysilicon contact resistance.

Keywords

CMOS integrated circuits; MOSFET; contact resistance; integrated circuit design; radiofrequency integrated circuits; semiconductor device models; semiconductor device noise; thermal noise; 0.13 micron; CMOS technology; RF CMOS circuit design; channel segmentation; compact noise modelling; drain current noise prediction; gate current noise prediction; gate resistance; nonquasistatic RF model; short-channel NMOS transistors; silicide-to-polysilicon contact resistance; thermal noise;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20040373

Filename

1301000