Title :
1.53 μm DFB lasers by mass transport
Author :
Broberg, B. ; Koyama, Fumio ; Tohmori, Y. ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
DFB lasers emitting at λ=1.53 μm made by mass transport have been demonstrated. Output power exceeding 5 mW/ facet was obtained when operated in CW at room temperature. Single-longitudinal-mode operation with a minimum threshold current of 26 mA was achieved. No degradation can be observed after aging at 5 mW continuous power at room temperature for more than 1000 h.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; CW operation; DFB lasers; III-V semiconductors; InGaAsP; LPE; aging; distributed feedback; lasers manufactured by mass transport; minimum threshold current; output power ≫5 mW per facet; room temperature; semiconductor lasers; wavelength 1.53 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840475
