Title :
Transverse junction stripe lasers using Si-doped GaAs/AlGaAs grown by MBE
Author :
Mitsunaga, K. ; Fujiwara, Koji ; Nunoshita, M. ; Nakayama, Taiki
Author_Institution :
Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
Abstract :
Transverse junction stripe (TJS) laser diodes on a semi-insulating substrate have been fabricated using Si-doped GaAs/AlGaAs double-heterostructure layers grown by MBE. Room-temperature CW operation of the TJS laser with a low threshold current (30 mA) has been achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; silicon; CW operation; DH lasers; III-V semiconductors; MBE; Si-doped GaAs/AlGaAs; TJS laser; double-heterostructure layers; integrated optics; laser diodes; semiconductor lasers; semiinsulating substrate; threshold current; transverse junction stripe lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840476
