DocumentCode
993918
Title
The magnetotransistor effect
Author
Andreou, A.G. ; Westgate, Charles R.
Author_Institution
Johns Hopkins University, Department of Electrical Engineering & Computer Science, Baltimore, USA
Volume
20
Issue
17
fYear
1984
Firstpage
699
Lastpage
701
Abstract
A new physical mechanism, active in the base region of dual-collector lateral bipolar tranistors in the presence of a transverse magnetic field, is described in the letter. This mechanism induces a differential current flow from the two collectors, and is also responsible for an increase in the overall current gain.
Keywords
bipolar transistors; magnetoelectric effects; semiconductor device models; base region; differential current flow; dual-collector lateral bipolar transistors; magnetotransistor effect; new physical mechanism; overall current gain increase; transverse magnetic field;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840480
Filename
4248980
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