Title :
Diffused planar InP bipolar transistor with a cadmium oxide film emitter
Author :
Su, L.M. ; Grote, N. ; Schmitt, F.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
Abstract :
A novel bipolar InP transistor is demonstrated which comprises a Zn-diffused base and a transparent conductor widegap emitter made of sputtered cadmium oxide. Preliminary current gain was about 10. Owing to its less demanding planar technology the device is assessed to be promising for monolithic integration.
Keywords :
III-V semiconductors; bipolar transistors; indium compounds; CdO sputtered layer; III-V semiconductor; InP bipolar transistor; Zn-diffused base; monolithic integration; planar technology; transparent conductor widegap emitter;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840490
