DocumentCode
994016
Title
Diffused planar InP bipolar transistor with a cadmium oxide film emitter
Author
Su, L.M. ; Grote, N. ; Schmitt, F.
Author_Institution
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
Volume
20
Issue
18
fYear
1984
Firstpage
716
Lastpage
717
Abstract
A novel bipolar InP transistor is demonstrated which comprises a Zn-diffused base and a transparent conductor widegap emitter made of sputtered cadmium oxide. Preliminary current gain was about 10. Owing to its less demanding planar technology the device is assessed to be promising for monolithic integration.
Keywords
III-V semiconductors; bipolar transistors; indium compounds; CdO sputtered layer; III-V semiconductor; InP bipolar transistor; Zn-diffused base; monolithic integration; planar technology; transparent conductor widegap emitter;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840490
Filename
4248992
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