Title :
Construction and characterization of a 117 cm2 silicon pixel detector
Author :
Heijne, E.H.M. ; Antinori, F. ; Barberis, D. ; Beker, H. ; Beusch, W. ; Burger, P. ; Campbell, M. ; Cantatore, E. ; Catanesi, M.G. ; Chesi, E. ; Darbo, G. ; D´Auria, S. ; Via, C. Da ; Bari, D. Di ; Liberto, S. Di ; Elia, D. ; Gys, T. ; Helstrup, H. ; Heus
Author_Institution :
CERN, Geneva, Switzerland
fDate :
8/1/1995 12:00:00 AM
Abstract :
A silicon pixel detector, developed in RD19, and consisting of 4 planes, ~30 cm2 each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300000 and each cell, 75 μm×500 μm, contains a complete signal processing chain. Overall dead area is less than 3%
Keywords :
CMOS integrated circuits; detector circuits; nuclear electronics; position sensitive particle detectors; signal processing; silicon radiation detectors; CMOS readout chips; Pb; Si; Si detector matrices; Si pixel detector; WA97 experiment; bump-bonding; dead area; identical arrays; signal processing chain; Assembly; Collaboration; Detectors; Event detection; Particle scattering; Physics; Research and development; Silicon; Smart pixels; Telescopes;
Journal_Title :
Nuclear Science, IEEE Transactions on
