Title :
1.3 μm InGaAsP DCPBH multiquantum-well lasers
Author :
Dutta, N.K. ; Napholtz, S.G. ; Yen, R. ; Brown, Robert L. ; Shen, T.M. ; Olsson, N.A. ; Craft, D.C.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We report the fabrication and performance characteristics of InGaAsP double-channel planar buried heterostructure (DCPBH) lasers with multiquantum-well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40-50 mA at 30°C, external differential quantum efficiencies of ˜50% at 30°C and T0 values ˜160 to 180 K in the temperature range 10-60°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 30°C; 40 to 50 mA threshold currents; DCPBH; III-V semiconductors; InGaAsP; LPE growth; MQW; double-channel planar buried heterostructure; fabrication; multiquantum-well lasers; optical communication equipment; performance characteristics; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840498
