Title :
Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits
Author :
Hong, Choong ; Kasemset, D. ; Kim, May E. ; Milano, R.A.
Author_Institution :
Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
The fabrication of an integrated optoelectronic transmitter consisting of an MOCVD-grown quantum-well laser and ion-implanted metal-semiconductor field-effect transistors (MESFETs) is described. The transmitter is characterised by a laser threshold current of 30 mA, differential quantum efficiency of 50%, MESFET transconductance of 60 mS/mm, and operation at frequencies up to 2 GHz.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optics; optical communication equipment; optoelectronic devices; semiconductor junction lasers; transmitters; vapour phase epitaxial growth; 2 GHz; 30 mA threshold current; GaAs/AlGaAs; III-V semiconductors; MESFET; MOCVD-grown quantum-well laser; VPE; epitaxial growth; integrated optics; integrated optoelectronic transmitter; ion-implanted GaAs integrated circuits; metalorganic CVD; monolithic IC; optical communication equipment; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840502
