DocumentCode
994187
Title
Picosecond optoelectronic switching in semiconductors using a partly covered gap
Author
Br¿¿ckner, V. ; Kerstan, F.
Author_Institution
Friedrich-Schiller University, Department of Physics, Jena, East Germany
Volume
20
Issue
18
fYear
1984
Firstpage
738
Lastpage
740
Abstract
The generation of picosecond electric pulses with high-voltage transmission by an optoelectronic switch with a partly covered gap and its application to time-resolved photoconductivity measurements in an ion-beam damaged SOS sample at different excitation wavelengths is reported.
Keywords
electrical conductivity measurement; optoelectronic devices; photoconductivity; pulse generators; semiconductor device testing; semiconductor switches; semiconductor-insulator boundaries; high-voltage transmission; ion-beam damaged SOS sample; optoelectronic switch; partly covered gap; picosecond electric pulses; relaxation studies; semiconductor-insulator boundaries; semiconductors; time-resolved photoconductivity measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840505
Filename
4249010
Link To Document