New profiled silicon PIN photodiode for scintillation detector

Author

Saitoh, Y. ; Akamine, T. ; Satoh, K. ; Inoue, M. ; Yamanaka, J. ; Aoki, K. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Avrillon, S. ; Okuno, S.

Author_Institution

Seiko Instrum. Inc., Japan

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

345

Lastpage

350

Abstract

Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a p⁺ layer was formed by MLD (MLD-PIN) or BF₂ ion implantation (BF₂ I/I-PIN), have been examined. The MLD-PIN has a shallow p⁺ junction depth (x_j) with sufficient high surface concentration, and simply and easily provides good performance for short-wavelength photosensitivity

Keywords

ion implantation; p-i-n photodiodes; BF₂; BF₂ ion implantation; Si; Si PIN photodiode; molecular layer doping; p⁺ layer; planar PIN; scintillation detector; scintillation shower counters; Amorphous materials; Annealing; Boron; Doping; Ion implantation; PIN photodiodes; Radiation detectors; Scintillation counters; Silicon; Surface resistance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467823

Filename

467823