Title :
New profiled silicon PIN photodiode for scintillation detector
Author :
Saitoh, Y. ; Akamine, T. ; Satoh, K. ; Inoue, M. ; Yamanaka, J. ; Aoki, K. ; Miyahara, S. ; Kamiya, M. ; Ikeda, H. ; Avrillon, S. ; Okuno, S.
Author_Institution :
Seiko Instrum. Inc., Japan
fDate :
8/1/1995 12:00:00 AM
Abstract :
Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a p+ layer was formed by MLD (MLD-PIN) or BF2 ion implantation (BF2 I/I-PIN), have been examined. The MLD-PIN has a shallow p+ junction depth (xj) with sufficient high surface concentration, and simply and easily provides good performance for short-wavelength photosensitivity
Keywords :
ion implantation; p-i-n photodiodes; BF2; BF2 ion implantation; Si; Si PIN photodiode; molecular layer doping; p+ layer; planar PIN; scintillation detector; scintillation shower counters; Amorphous materials; Annealing; Boron; Doping; Ion implantation; PIN photodiodes; Radiation detectors; Scintillation counters; Silicon; Surface resistance;
Journal_Title :
Nuclear Science, IEEE Transactions on
