A semi-empirical model for the field-effect mobility of hydrogenated polycrystalline-silicon MOSFETs

Author

Seki, Shunji ; Kogure, Osamu ; Tsujiyama, Bunjiro

Author_Institution

Opto-Electron. Labs., NTT Corp., Kanagawa, Japan

Volume

35

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

669

Lastpage

674

Abstract

The quantitative relationship between field-effect mobility (μ _FE) and grain-boundary trap-state density (N_t) in hydrogenated polycrystalline-silicon (poly-Si) MOSFETs is investigated. The focus is on the field-effect mobility in MOSFETs with N_t 1×10² cm^-2. It is found that reducing N_t to as low as 5×10¹¹ cm^-2 has a great impact on μ_FE. MOSFETs with the N_t of 4.2×10¹¹ cm^-2 show an electron mobility of 185 cm²/V-s, despite a mean grain size of 0.5 μm. The three principal factors that determine μ_FE, namely, the low-field mobility, the mobility degradation factor, and the trap-state density N_t are clarified

Keywords

carrier mobility; defect electron energy states; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; electron mobility; field-effect mobility; grain size; grain-boundary trap-state density; low-field mobility; mobility degradation factor; polycrystalline Si:H; polysilicon MOSFETs; semiempirical model; Degradation; Electric variables; Electron mobility; Electron traps; Grain boundaries; Grain size; MOSFETs; Semiconductor films; Silicon; Three-dimensional integrated circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2511

Filename

2511