Title :
Thermal- and Laser-Induced Order–Disorder Switching of In-Doped Fast-Growth Sb70Te30 Phase-Change Recording Films
Author :
Hsu, Yung-Sung ; Her, Yung-Chiun ; Cheng, Shun-Te ; Tsai, Song-Yeu
Author_Institution :
Dept. of Mater. Eng., Nat. Chung-Hsing Univ., Taichung
Abstract :
Adding In into Sb70Te30 recording film can improve the archival stability. However, initializing ability and recording sensitivity will be scarified, and ablation effect will be enhanced. Recording bits could only be smoothly switched between the amorphous and crystalline states with an adequate value of reduced activation energy
Keywords :
amorphous semiconductors; annealing; antimony compounds; crystallisation; indium; laser beam effects; melting; optical storage; order-disorder transformations; phase change materials; random-access storage; semiconductor thin films; InSbTe; ablation effect; amorphous state; crystalline state; crystallization; initializing ability; laser irradiation; laser-induced order-disorder switching; melting; phase change recording films; recording bits; recording sensitivity; thermal annealing; thermal-induced order-disorder switching; Annealing; Crystallization; Disk recording; Kinetic theory; Optical films; Optical materials; Optical pulses; Plasma temperature; Reflectivity; Tellurium; Crystallization; In–Sb–Te; melting; pulsed laser irradiation; reduced activation energy;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.888523
