DocumentCode
994326
Title
Collector/emitter offset voltage in double-heterojunction bipolar transistors
Author
Hayes, J.R. ; Gossard, Arthur C. ; Wiegmann, W.
Author_Institution
Bell Communications Research Inc., Murray Hill, USA
Volume
20
Issue
19
fYear
1984
Firstpage
766
Lastpage
767
Abstract
Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Ã… compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; molecular beam epitaxial growth; 130 angstroms compositional grading; DHBT; GaAlAs/GaAs DHBT; III-V semiconductors; MBE; base/collector heterojunction; base/collector junctions; collector/emitter offset voltage; digital switching circuits; double-heterojunction bipolar transistors; emitter base junction; insufficient grading;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840521
Filename
4249029
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