The effect of bi- and trivalent cation impurities on the luminescence of CsI

Author

Gektin, A.V. ; Krasovitskaya, I.M. ; Shiran, N.V. ; Shlyahturov, V.V. ; Vinograd, E.L.

Author_Institution

Inst. for Single Crystals, Kharkov, Ukraine

Volume

42

Issue

4

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

285

Lastpage

287

Abstract

The effect of states of bi- (Ca) and trivalent (Sb, Bi) impurities on the optical and scintillation characteristics of CsI crystals is studied. The variation of point defect states (quenching, deformation, impurity concentration, diffusional activation) changes the correlation between different components of luminescence. The analysis of the obtained results leads to a conclusion about the role of cation vacancy type defects for the localization of the exciton in CsI crystals

Keywords

antimony; bismuth; caesium compounds; calcium; defect states; excitons; impurity states; localised states; photoluminescence; point defects; radiation quenching; scintillation; solid scintillation detectors; vacancies (crystal); CsI:Ca; CsI:Sb,Bi; bivalent cation impurities; crystals; deformation; diffusional activation; exciton localization; impurity concentration; optical characteristics; photoluminescence; point defect states; quenching; scintillation characteristics; trivalent cation impurities; vacancy type defects; Absorption; Bismuth; Cooling; Crystals; Excitons; Impurities; Luminescence; Photoluminescence; Plastics; Stimulated emission;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.467835

Filename

467835