Solid phase growth technique for high cut-off frequency polysilicon TFT integrated circuits on a quartz substrate

Author

Emoto, Fumiaki ; Senda, Kohji ; Fujii, Eiji ; Nakamura, A. ; Yamamoto, A. ; Uemoto, Y. ; Kano, Gota

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

Volume

37

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1462

Lastpage

1466

Abstract

The technique features the use of self-implantation at two energy steps, i.e. 150 and 40 keV. The complete amorphization of the initial low-pressure chemical vapor deposition (LPCVD) polysilicon is thereby attained throughout the film. Application of the solid-phase growth technique resulted in excellent high-frequency performance of the thin-film transistors (TFTs) over a large area with high reproducibility. The field effect mobilities obtained for n-channel and p-channel TFTs are as high as 148 and 68 cm²/V-s, respectively. TFT shift registers consisting of 223 stages of CMOS D-type flip-flops can successfully operate at clock frequencies up to 25 MHz under a supply voltage of 15.5 V on a fused-quartz substrate

Keywords

CMOS integrated circuits; chemical vapour deposition; digital integrated circuits; flip-flops; integrated circuit technology; ion beam mixing; ion implantation; quartz; recrystallisation annealing; semiconductor technology; shift registers; substrates; thin film transistors; 15.5 V; 150 keV; 25 MHz; 40 keV; CMOS; D-type flip-flops; LPCVD; SiO₂ substrate; SiO₂-Si; amorphization; clock frequencies; field effect mobilities; fused-quartz substrate; high cut-off frequency; high reproducibility; high-frequency performance; low-pressure chemical vapor deposition; polysilicon TFT integrated circuits; self-implantation; shift registers; solid-phase growth technique; supply voltage; thin-film transistors; Chemical vapor deposition; Clocks; Cutoff frequency; Flip-flops; Reproducibility of results; Shift registers; Solids; Substrates; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.106241

Filename

106241