Title :
Nonlinearity in GaAs FET power amplifying devices
Author :
Cheng, T.C. ; Shurmer, H.V.
Author_Institution :
Bell-Northern Research, Ottawa, Canada
Abstract :
Modern microwave communication systems rely heavily on the linearity of output stages incorporating GaAs FET power amplifying devices. This letter describes a system for the automatic nonlinearity measurement in such devices of gain and phase angle as functions of input power level and frequency, with results leading to significantly improved system performance.
Keywords :
III-V semiconductors; electric distortion measurement; field effect transistors; gallium arsenide; microwave amplifiers; microwave links; power amplifiers; solid-state microwave devices; GaAs FET power amplifying devices; III-V semiconductors; automatic nonlinearity measurement; delta gain measurement; delta phase measurement; function of frequency; functions of input power level; gain measurement; linearity; microwave communication systems; phase angle measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840537
