Title :
Effect of Oxygen Concentration on Characteristics of NiO x-Based Resistance Random Access Memory
Author :
Lee, Ming-Daou ; Ho, Chia-Hua ; Lo, Chi-Kuen ; Peng, Tai-Yen ; Yao, Yeong-Der
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory
Keywords :
Schottky effect; electrical resistivity; nickel compounds; oxygen; permittivity; random-access storage; switching; thin films; 293 to 298 K; NiOx; NiOx-based random access memory; Schottky emission; barrier height; bias voltage; dielectric constant; nickel oxide films; oxygen concentration; resistance bistability; switching effect; Dielectric materials; Electric resistance; Electric variables; Electrodes; Nickel; Oxygen; Phase change random access memory; Plasma temperature; Random access memory; Voltage; NiO; Schottky emission; resistance random access memory (RRAM);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.888525
