Study of Nanoscale Recorded Marks on Phase-Change Recording Layers and the Interactions With Surroundings

Author

Lin, Shih Kai ; Lin, I. Chun ; Chen, Sen Yong ; Hsu, Hao Wen ; Tsai, Din Ping

Author_Institution

Dept. of Phys., Nat. Taiwan Univ., Taipei

Volume

43

Issue

2

fYear

2007

Firstpage

861

Lastpage

863

Abstract

Conductive-atomic force microscopy (C-AFM) has been used for studying nanoscale recorded marks with different length on the phase-change recording layer of optical disks. Through C-AFM images, a comparison of nanoscale recorded marks on phase-change recording layer under different writing strategies and writing power has been taken. The comparison can help analyze the combination of writing strategy, writing power and laser pulse width. The various lengths of recorded marks for high density data storage have also been found out. The interactions between phase-change recording layers and their surroundings have also been studied. This study opens up a possibility to improve the capacity of data storage in today´s commercial optical disks

Keywords

atomic force microscopy; digital versatile discs; phase change materials; DVD; conductive-atomic force microscopy; high density data storage; laser pulse width; nanoscale recorded marks; optical disks; phase-change recording layer; writing power; writing strategies; Disk recording; Memory; Optical microscopy; Optical pumping; Optical recording; Power lasers; Probes; Scanning electron microscopy; Transmission electron microscopy; Writing; Conductive-atomic force microscopy (C-AFM); DVD; optical disk; phase-change recording layer; recorded mark; writing strategy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.888471

Filename

4069044