DocumentCode :
994499
Title :
A NAND Flash Memory Controller for SD/MMC Flash Memory Card
Author :
Lin, Chuan-Sheng ; Dung, Lan-Rong
Author_Institution :
Prolific Technol., Inc, Hsinchu
Volume :
43
Issue :
2
fYear :
2007
Firstpage :
933
Lastpage :
935
Abstract :
In this paper, a novel NAND flash memory controller was designed. A t-EC w-bit parallel Bose-Chaudhuri-Hocquengham (BCH) error-correction code (ECC) was designed for correcting the random bit errors of the flash memory chip, which is suitable for the randomly bit errors property and parallel I/O interface of the NAND-type flash memory. A code-banking mechanism was designed for the tradeoffs between the controller cost and the in-system programmability (ISP) support. With the ISP functionality and the Flash parameters programmed in the reserved area of the flash memory chip during the card production stage, the function for supporting various kinds of NAND flash memory could be provided by a single controller. In addition, built-in defect management and wear-leveling algorithm enhanced the product life cycle and reliability. Dual channel accessing of the Flash memory provided the good performance in data transfer rate. With respect to the proposed controller architecture, a real secure digital card (SD)/multimedia card (MMC) flash memory card controller chip was designed and implemented with UMC 0.18 mum CMOS process. Experimental results show the designed circuit can fully comply with the system specifications and shows the good performances
Keywords :
NAND circuits; circuit reliability; error correction codes; flash memories; memory cards; NAND flash memory controller; SD/MMC flash memory card; error-correction code; in-system programmability support; product life cycle; reliability; Circuits; Control engineering; Control systems; Costs; Error correction codes; Flash memory; Microprogramming; Production; Systolic arrays; Very large scale integration; NAND flash memory controller; Bose–Chaudhuri–Hocquengham (BCH) error-correction code (ECC); flash storage systems; nonvolatile memory;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.888520
Filename :
4069045
Link To Document :
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