Title :
Crescent InGaAsP mesa substrate buried-heterostructure lasers at 1.55 μm
Author :
Feldman, R.D. ; Austin, R.F. ; Oron, M.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50-70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T0 = 70°C, which is higher than normally seen in 1.55 μm lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; linear programming; optical communication equipment; semiconductor junction lasers; BH lasers; III-V semiconductors; InGaAsP mesa substrate buried-heterostructure lasers; inverted buried-crescent active layer; linear light/current characteristics; mesa substrates; optical communication lasers; output power; semiconductor lasers; single liquid-phase-epitaxial growth step; temperature dependence; threshold current; wavelength 1.55 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840541
