DocumentCode :
994533
Title :
Interpolation of MOSFET table data in width, length, and temperature
Author :
Graham, Mark G. ; Paulos, John J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume :
12
Issue :
12
fYear :
1993
fDate :
12/1/1993 12:00:00 AM
Firstpage :
1880
Lastpage :
1884
Abstract :
Table-based transistor modeling techniques require a current table and a charge/capacitance table for each device geometry at each simulation temperature. Simple interpolation methods can be used to construct any current table from a small basis set of tables. A database of 32 current tables (two widths, four lengths, measured at four temperatures) is sufficient to span the space defined by these sample points. The technique provides an accurate rendering of the transistor current above threshold without the need for complex parameter optimization and without the need for an exhaustive database of current tables
Keywords :
insulated gate field effect transistors; interpolation; semiconductor device models; MOSFET table data; charge/capacitance table; current table; device geometry; interpolation methods; simulation temperature; table-based transistor modeling techniques; transistor current; Current measurement; Geometry; Interpolation; Length measurement; MOSFET circuits; Solid modeling; Spatial databases; Temperature; Testing; Voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.251151
Filename :
251151
Link To Document :
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