DocumentCode
994533
Title
Interpolation of MOSFET table data in width, length, and temperature
Author
Graham, Mark G. ; Paulos, John J.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
12
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
1880
Lastpage
1884
Abstract
Table-based transistor modeling techniques require a current table and a charge/capacitance table for each device geometry at each simulation temperature. Simple interpolation methods can be used to construct any current table from a small basis set of tables. A database of 32 current tables (two widths, four lengths, measured at four temperatures) is sufficient to span the space defined by these sample points. The technique provides an accurate rendering of the transistor current above threshold without the need for complex parameter optimization and without the need for an exhaustive database of current tables
Keywords
insulated gate field effect transistors; interpolation; semiconductor device models; MOSFET table data; charge/capacitance table; current table; device geometry; interpolation methods; simulation temperature; table-based transistor modeling techniques; transistor current; Current measurement; Geometry; Interpolation; Length measurement; MOSFET circuits; Solid modeling; Spatial databases; Temperature; Testing; Voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.251151
Filename
251151
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