• DocumentCode
    994533
  • Title

    Interpolation of MOSFET table data in width, length, and temperature

  • Author

    Graham, Mark G. ; Paulos, John J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
  • Volume
    12
  • Issue
    12
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    1880
  • Lastpage
    1884
  • Abstract
    Table-based transistor modeling techniques require a current table and a charge/capacitance table for each device geometry at each simulation temperature. Simple interpolation methods can be used to construct any current table from a small basis set of tables. A database of 32 current tables (two widths, four lengths, measured at four temperatures) is sufficient to span the space defined by these sample points. The technique provides an accurate rendering of the transistor current above threshold without the need for complex parameter optimization and without the need for an exhaustive database of current tables
  • Keywords
    insulated gate field effect transistors; interpolation; semiconductor device models; MOSFET table data; charge/capacitance table; current table; device geometry; interpolation methods; simulation temperature; table-based transistor modeling techniques; transistor current; Current measurement; Geometry; Interpolation; Length measurement; MOSFET circuits; Solid modeling; Spatial databases; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.251151
  • Filename
    251151