Title :
Ge APD/GaAs FET/op-amp transimpedance optical receiver design having minimum noise and intersymbol interference characteristics
Author :
Walker, S.D. ; Blank, L.C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The recent commercial availability of broadband linear-phase operational amplifiers has allowed a new high-bit-rate transimpedance optical receiver design to be realised. This design allows the convenient optimisation of the receiver frequency response for minimum noise and intersymbol interference. Practical sensitivities of ¿49.3 dBm (70% QE) at 140 Mbit/s and 1.52 ¿m have been routinely achieved using packaged components and 30 ¿m-diameter Ge p+n APDs.
Keywords :
avalanche photodiodes; elemental semiconductors; field effect transistors; gallium arsenide; germanium; infrared detectors; operational amplifiers; receivers; GaAs FET; Ge avalanche photodiode; IR detector; intersymbol interference characteristics; linear-phase operational amplifiers; minimum noise; receiver frequency response; sensitivity -49.3 dBm; transimpedance optical receiver;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840549
