DocumentCode
994622
Title
Ge APD/GaAs FET/op-amp transimpedance optical receiver design having minimum noise and intersymbol interference characteristics
Author
Walker, S.D. ; Blank, L.C.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
20
Issue
20
fYear
1984
Firstpage
808
Lastpage
809
Abstract
The recent commercial availability of broadband linear-phase operational amplifiers has allowed a new high-bit-rate transimpedance optical receiver design to be realised. This design allows the convenient optimisation of the receiver frequency response for minimum noise and intersymbol interference. Practical sensitivities of ¿49.3 dBm (70% QE) at 140 Mbit/s and 1.52 ¿m have been routinely achieved using packaged components and 30 ¿m-diameter Ge p+n APDs.
Keywords
avalanche photodiodes; elemental semiconductors; field effect transistors; gallium arsenide; germanium; infrared detectors; operational amplifiers; receivers; GaAs FET; Ge avalanche photodiode; IR detector; intersymbol interference characteristics; linear-phase operational amplifiers; minimum noise; receiver frequency response; sensitivity -49.3 dBm; transimpedance optical receiver;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19840549
Filename
4249059
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