Title :
High-gain In0.53Ga0.47As:Fe photoconductive detectors
Author :
Rao, Mulpuri V. ; Bhattacharya, P.K.
Author_Institution :
University of Michigan, Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, Ann Arbor, USA
Abstract :
Photoconductive detectors were fabricated on semi-insulating liquid phase epitaxial In0.53Ga0.47As/InP doped with Fe for the first time. Their performance characteristics have been compared with identical devices made from Zn-doped p-In0.53Ga0.47As/InP. Internal optical gains up to 10 were measured in the Fe-doped devices. The bias and intensity-dependent gain characteristics of these devices are discussed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; photoconducting devices; photodetectors; III-V semiconductor; In0.53Ga0.47As:Fe photoconductive detectors; LPE; intensity-dependent gain characteristics; internal optical gain; performance characteristics; photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840552
