Design of a 1.65-μm-band optical time-domain reflectometer

Author

Takasugi, Hidetoshi ; Tomita, Nobuo ; Nakano, Junichi ; Atobe, Naoyuki

Author_Institution

NTT Network Syst. Dev. Center, Tokyo, Japan

Volume

11

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

1743

Lastpage

1748

Abstract

The design and performance of a 1.65-μm-band single-mode optical time-domain reflectometer (OTDR) with a laser diode source are described. The approach employs a high-power laser diode with a strained-layer InGaAs/InGaAsP multiple-quantum-well (MQW) structure which is grown by metalorganic vapor phase epitaxy (MOVPE), an InGaAs avalanche photodiode, and methods for reducing the optical wiring loss in an optical unit. A 1.65-μm-band OTDR is realized with a single-way dynamic range of 25 dB at a pulse width of 1.0 μs

Keywords

optical fibre testing; optical time-domain reflectometry; 1.0 mus; 1.65 micron; InGaAs; InGaAs avalanche photodiode; InGaAs-InGaAsP; MOVPE; MQW; OTDR; design; high-power laser diode; laser diode source; metalorganic vapor phase epitaxy; optical fibre cable testing; optical unit; optical wiring loss; performance; pulse width; single-mode optical time-domain reflectometer; single-way dynamic range; strained-layer InGaAs/InGaAsP multiple-quantum-well structure; Avalanche photodiodes; Diode lasers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical design; Optical losses; Quantum well devices; Time domain analysis; Wiring;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.251170

Filename

251170