Title :
Semiconductor laser lineshape and parameter determination from fringe visibility measurements
Author :
Eichen, E. ; Melman, Paul
Author_Institution :
GTE Laboratories Incorporated, Waltham, USA
Abstract :
The field autocorrelation function of single-mode 1.3 ¿m InGaAsP lasers has been measured using a Michelson interferometer. Comparison with theory for semiconductor laser line broadening yields the relaxation oscillation frequency, its damping rate and the linewidth broadening factor. A comparison with other techniques for lineshape measurement is presented.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light interferometry; semiconductor junction lasers; spectral line breadth; InGaAsP lasers; Michelson interferometer; damping rate; field autocorrelation function; fringe visibility; linewidth broadening factor; relaxation oscillation frequency; semiconductor laser line broadening; single mode laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840562
