• DocumentCode
    994834
  • Title

    GaAs/LB film MISS switching device

  • Author

    Thomas, N.J. ; Petty, Michael C. ; Roberts, G.G. ; Hall, H.Y.

  • Author_Institution
    University of Durham, Department of Applied Physics & Electronics, Durham, UK
  • Volume
    20
  • Issue
    20
  • fYear
    1984
  • Firstpage
    838
  • Lastpage
    839
  • Abstract
    MISS switches incorporating Langmuir-Blodgett films as insulating layers are reported for the first time. Devices fabricated using n on p+ GaAs and including a 9 nm-thick ¿-tricosenoic acid insulating layer are shown to possess good characteristics. The results indicate that switching occurs due to a `punch-through¿ mechanism.
  • Keywords
    III-V semiconductors; Langmuir-Blodgett films; gallium arsenide; metal-insulator-semiconductor devices; semiconductor switches; GaAs; Langmuir-Blodgett films; MISS switching device; insulating layers; punchthrough mechanism; semiconductor switch; ¿-tricosenoic acid;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840569
  • Filename
    4249079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994834