• DocumentCode
    994916
  • Title

    CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

  • Author

    Blondeau, R. ; Razeghi, M. ; Krakowski, M. ; Vilain, G. ; de Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    850
  • Lastpage
    851
  • Abstract
    A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; CW operation; GaInAsP buried ridge structure laser; LP MOCVD; output power 15 mW; semiconductor laser; threshold current 40 mA; wavelength 1.5 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840577
  • Filename
    4249088
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994916