• DocumentCode
    994970
  • Title

    Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers

  • Author

    Brillouet, F. ; Riou, J. ; Trotte, M. ; Azoulay, Rina ; Dugrand, L.

  • Author_Institution
    Centre National d´Ã\x89tudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France
  • Volume
    20
  • Issue
    21
  • fYear
    1984
  • Firstpage
    857
  • Lastpage
    859
  • Abstract
    We report on the first MOCVD/LPE buried-heterostructure lasers realised using a simple LPE burying process, leading to low thresholds and little dispersion in device characteristics.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAs-GaAlAs BH lasers; LPE burying process; MOCVD/LPE; buried-heterostructure lasers; low dispersion; low thresholds; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840582
  • Filename
    4249093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=994970